Threshold for potential sputtering of LiF

G. Hayderer, M. Schmid, P. Varga, H.P. Winter, F. Aumayr, L. Wirtz1, C. Lemell1, J. Burgdörfer1, L. Hägg2, C.O. Reinold3

Institut für Allgemeine Physik, Technische Universität Wien, A-1040 Wien, Austria
1Institut für Theoretische Physik, Technische Universität Wien, A-1040 Wien, Austria
2Department of Physics and Mathematics, Mid Sweden University, S-85170 Sundsvall, Sweden
3Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6373, U.S.A.

Phys. Rev. Lett. 83 (1999) 3948-3951

We have measured total sputtering yield for impact of slow (<=100 eV) singly and doubly charged ions on LiF. The minimum potential energy necessary to induce potential sputtering (PS) from LiF was determined to be about 10 eV. This threshold coincides with the energy necessary to produce a cold hole in the valence band of LiF by resonant neutralization. This allows the first unambigous identification of PS induced by cold holes. Further stepwise increase of the sputtering yield with higher projectile potential energy provides evidence for additional defect-mediated sputtering mechanisms operative in alkali halides.

Corresponding author: F. Aumayr (aumayr< encoded email address >).

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