A buried Si(100) monolayer in GaAs has been investigated by soft X-ray emission spectroscopy (SXE) and surface X-ray diffraction (SXD). In both cases the data were analyzed by computations. The SXE spectra were compared to ab-initio results for several different atomic geometries. An optimal fit was found for 63% Si in Ga-sites according to these calculations, while SXD indicates a somewhat lower value. Details on the electronic structure were also extracted.
Correspondence to: P.O. Nilsson.