Oxygen-induced vacancy formation on a metal surface

M. Schmid, G. Leonardelli, M. Sporn, E. Platzgummer, W. Hebenstreit1, M. Pinczolits2, and P. Varga

*Institut für Allgemeine Physik, Technische Universität Wien, A-1040 Wien, Austria
1Present address: Department of Physics, Tulane University, New Orleans, LA 70118
2Present address: Institut für Halbleiterphysik, Johannes-Kepler Universität Linz, A-4040 Linz, Austria

Phys. Rev. Lett. 82 (1999) 355-358

Using scanning tunneling microscopy, low-energy ion scattering and quantitative low-energy electron diffraction, we find about 17% metal vacancies on the oxygen-covered Cr(100) surface. The oxygen atoms occupy all hollow sites of the first layer, including those neighboring a Cr vacancy. We argue that the vacancy formation is energetically favoured and not caused by stress but rather by electronic effects.

Corresponding author: M. Schmid (schmid< encoded email address >)

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